LIU HoufangAssociate Research Professor

  • Email : houfangliu@tsinghua.edu.cn
Education Background

Sep.2008 - Jul.2013  Ph.D. Institute of Physics  Chinese Academy of Sciences

Sep.2004 - Aug.2008 Bachelor of Science Physics  Shandong University


Work Experience

Apr. 2021 - Present  Faculty, National Research Center for Information Science and Technology, Tsinghua University

Jun. 2018 - April 20.  Associate Research Fellow, Beijing Graphene Institute

May. 2014 - Jun. 2018  Postdoctoral Researcher, Institute of Microelectronics, Tsinghua University

Jul. 2013 - Apr. 2014  Researcher, STT-MRAM Project, Institute of Physics, Chinese Academy of Sciences - MagIC, USA - SMIC


Research Areas

(1) Ferroelectric memory, logic, and in-memory computing devices and chips

(2) Flexible sensor devices and chip systems

(3) Novel RF devices and system applications


Research Overview

Long engaged in research on high-performance, low-power information functional materials, micro/nanoelectronic devices, and their applications in memory and in-memory computing, his work primarily focuses on: hafnium-based ferroelectric memory and in-memory computing devices and chips; flexible wearable sensor devices and integrated systems; and flexible memory, processing, and in-memory computing chip systems. As the first or corresponding author, he has published over 80 SCI-indexed papers in internationally renowned journals including Nature Communications, Science Advances, Advanced Functional Materials, Nano Letters, IEEE Transactions on Electron Devices (TED), and IEEE Electron Device Letters (EDL). He has been granted 35 patents.


Awards and Honors

(1)Beijing Science and Technology Award, Third Prize (2017)

(2)Beijing Science and Technology Award, First Prize (2013)


Academic Achievements

Published Papers:

[1] D. Li, T.-R. Cui, J.-H. Liu, W.-C. Shao, X. Liu, Z.-K. Chen, Z.-G. Xu, X. Li, S.-Y. Xu, Z. Y.Xie, J.-M. Jian, X. Wang, L. -Q. Tao, X. -M. Wu, Z.- W. Cheng, Z.-R.Dong, H. F. Liu*, Y. Yang*, J. Zhou*, T.-L. Ren*, “Motion-unrestricted dynamic electrocardiogram system utilizing imperceptible electronics”, Nature Communications, 16, 3259 (2025).

[2] A. B. Cheng, X. Li, Ding Li, Z. K. Chen, T. R. Cui, L.-Q. Tao, J. M. Jian, H. J. Xiao, W. C. Shao, Z. Y. Tang, X. Y. Li, Z. R. Dong, H. F. Liu*, Y. Yang*, T.-L. Ren*, “An intelligent hybrid-fabric wristband system enabled by thermal encapsulation for ergonomic human-machine interaction”, Nature Communications, 16, 591(2025).

[3] T. Lu, J. Y. Xue, P. H. Shen, H. F. Liu*, X. Y. Gao, X. M. Li, J. Hao, D. P. Huang, R. T. Zhao, J. L. Yan, Mingdong Yang, Bonan Yan, Peng Gao, Z. Y. Lin, Y. Yang, T.-L. Ren, “Two-dimensional fully ferroelectric-gated hybrid computing-in-memory hardware for high-precision and energy-efficient dynamic tracking”, Science Advances, 10, eadp0174 (2024).

[4] R. T. Zhao, H. F. Liu*, M. D. Yang, T. Lu, Z. R. Li, Z. Q. Shi, Z. Z. Wang, J. W. Liu, Y. Yang, and T.-L. Ren*, “Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory”, Nano Letters 24, 10957 (2024).

M. H. Shao, H. F. Liu*, Ri. He, X. M. Li, L. Wu, J. Ma, C. Ye, X. C. Hu, R. T. Zhao, Z. C. Zhong, Y. Yu, C. H. Wan, Y. Yang, C.-W. Nan, X. D. Bai*, T.-L. Ren*, and X. R. Wang*, “Programmable ferroelectricity in HZO enabled by oxygen defect engineering”, Nano Letters 24, 1231 (2024)