教育背景

2010.09-2015.07 清华大学 材料科学与工程 博士

2006.09-2010.06 中南大学 材料科学与工程 学士

工作履历

2021.12至今  清华大学  副研究员

2020.11-2021.12  清华大学  助理研究员

2018.09-2019.06  德国慕尼黑工业大学  洪堡学者（Humboldt Research Fellow）

2017.03-2018.08  德国雷根斯堡大学  洪堡学者（Humboldt Research Fellow）

2015.07-2020.10  北京航空航天大学物理学院  助理教授

研究领域

（1）神经拟态自旋电子器件及类脑计算

（2）光电功能材料及人工智能光计算芯片

（3）二维磁、光、电信息功能器件及片上集成

研究概况

长期从事新型信息功能材料与器件研究，在信息功能材料的多物理场调控、反铁磁自旋电子学、神经拟态光电忆阻器等方面取得系列成果，在提高自旋/光电子操控效率、降低器件功耗、提高存算速度等关键科学问题上实现突破。主持国家自然科学基金面上项目、青年项目、清华大学自主科研计划等，参与科技部科技创新2030-新一代人工智能重大项目等，在Nature Electronics，Nature Communications，Science Advances, Physical Review Letters，Advanced Materials等领域权威期刊发表论文50余篇，并获多项授权专利。

奖励与荣誉

德国洪堡学者Humboldt research fellowship

清华大学第二十届学术新秀

清华大学优秀博士论文一等奖

中国真空学会博士优秀论文奖

北京市/清华大学优秀毕业生

学术成果

代表性学术成果:

[1] Yuyan Wang*, Takuya Taniguchi, Po-Hung Lin, Daniel Zicchino, Andreas Nickl, Jan Sahliger, Chih-Huang Lai, Cheng Song, Huaqiang Wu, Qionghai Dai, Christian H. Back*. Time-resolved detection of spin–orbit torque switching of magnetization and exchange bias. Nature Electronics, 5, 840-848 (2022).

[2] Lei Han#, Yuyan Wang#, Wenxuan Zhu, Runni Zhao, Xianzhe Chen, Rongxuan Su, Yongjian Zhou, Hua Bai, Qian Wang, Yunfeng You, Chong Chen, Sen Yan, Tongjin Chen, Yongzheng Wen, Cheng Song*, Feng Pan*. Spin homojunction with high interfacial transparency for efficient spin-charge conversion. Science Advances, 8, eabq2742 (2022).

[3] Y. Wang*, M. M. Decker, T. N.G. Meier, X. Chen, C. Song, T. Grünbaum, W. Zhao, J. Zhang, L. Chen*, C. H. Back. Spin pumping during the antiferromagnetic-ferromagnetic phase transition of iron-rhodium. Nature Communications, 11, 275 (2020).

[4] Jiacheng Sun, Yuyan Wang*, Shaoqiang Guo, Bensong Wan, Lianqing Dong, Youdi Gu, Cheng Song, Caofeng Pan, Qinghua Zhang, Lin Gu, Feng Pan and Junying Zhang*. Lateral 2D WSe2 p–n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics. Advanced Materials, 32, 1906499 (2020).

[5] Shaoqiang Guo, Yuyan Wang*, Junying Zhang*. Realization of valley polarization in monolayer WS2 via 3d transition metal atom adsorption, Journal of Physics D: Applied Physics, 53, 384001 (2020).

[6] Lianqing Dong, Yuyan Wang*, Jiacheng Sun, Caofeng Pan, Qinghua Zhang, Lin Gu, Bensong Wan, Cheng Song, FengPan, Cong Wang, Zilong Tang, Junying Zhang*, Facile Access to Shape-controlled Growth of WS2 Monolayer via Environment-Friendly Method, 2D Materials, 6, 015007 (2019).

[7] Shaoqiang Guo, Yuyan Wang, Cong Wang, Zilong Tang, Junying Zhang*, Large Spin Orbit Splitting in Conduction Band of Halogen (F, Cl, Br and I) Doped Monolayer WS2 with Spin-Orbit Coupling, Physical Review B, 96, 245305 (2017).

[8] Y. Y. Wang*, C. Song*, J. Y. Zhang, F. Pan. Spintronic materials and devices based on antiferromagnetic metals. (Review). Progress in Natural Science: Materials International, 27, 208–216 (2017).

[9] Yuyan Wang, Xiang Zhou, Cheng Song*, Yinuo Yan, Shiming Zhou, Guangyue Wang, Chao Chen, Fei Zeng, Feng Pan*, Electrical control of exchange spring in antiferromagnetic metals. Advanced Materials, 27, 3196 (2015).

[10] Yuyan Wang, Cheng Song*, Guangyue Wang, Jinghui Miao, Fei Zeng, Feng Pan*. Anti-ferromagnet controlled tunneling magnetoresistance. Advanced Functional Materials, 24, 6806 (2014).

[11] Y. Y. Wang, C. Song*, G. Y. Wang, F. Zeng, F. Pan*. Evidence for asymmetric rotation of spins in antiferromagnetic exchange-spring. New Journal of Physics, 16, 123032 (2014).

[12] Y. Y. Wang, C. Song*, B. Cui, G. Y. Wang, F. Zeng, F. Pan*, Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in an antiferromagnet-based tunnel junction. Physical Review Letters, 109, 137201 (2012).